A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs

作者：Wen, Zhang; Xu, Yuehang^*; Chen, Yongbo; Tao, Hongqi; Ren, Chunjiang; Lu, Haiyan; Wang, Zhensheng; Zheng, Weibin; Zhang, Bin; Chen, Tangsheng; Gao, Tao; Xu, Ruimin

来源：IEEE Transactions on Microwave Theory and Techniques, 2017, 65(12): 5113-5122.

DOI：10.1109/TMTT.2017.2765326

• GaN high-electron mobility transistors (HEMTs)
• large-signal modeling
• scalable
• surface-potential
• trapping effects
• zone division

This paper presents an accurate quasi-physical compact large-signal model for GaN high electron mobility transistors (HEMTs). The drain current I-ds expression is acquired by combining the zone division method and the surface potential theory. The proposed I-ds model only contains 19 empirical parameters, with self-heating, ambient temperature and trapping effects considered. The self-heating effects are modeled by a polynomial function of temperature and gate voltage for the critical electric field E-c. And the ambient temperature effects are modeled by modifying pinchoff voltage and maximal electron saturated velocity. The trapping effects are considered with an effective gate-source voltage method. Moreover, taking the advantage of good physical meaning, the proposed I-ds model is scalable. In house 0.15-mu m GaN HEMTs with different sizes are used to validate the model by dc I-V over a wide ambient temperature range, pulsed I-V, multibias S-parameters up to 50 GHz and multibias large-signal characteristics at f(0) = 30 GHz. The good results show that the proposed quasi-physical zone division model is useful for millimeter-wave GaN HEMTs development and circuit design.

• 出版日期2017-12
• 单位电子科技大学