An E-Band Power Amplifier With Broadband Parallel-Series Power Combiner in 40-nm CMOS

作者：Zhao Dixian^*; Reynaert Patrick

来源：IEEE Transactions on Microwave Theory and Techniques, 2015, 63(2): 683-690.

DOI：10.1109/TMTT.2014.2379277

• Amplifier layout
• broadband impedance matching
• CMOS
• E-band
• load-pull
• millimeter wave
• modulated signal measurement
• neutralization
• power amplifier (PA)
• power combining

This paper describes a fully integrated E-band power amplifier (PA) in 40-nm CMOS. The design and layout of the unit PA stage is optimized to achieve high output power while maintaining high power gain. A broadband parallel-series power combiner is proposed to provide the PA stage optimum load impedance across the complete E-band. The complete PA achieves a measured saturated output power of 20.9 dBm with more than 15-GHz small-signal -3-dB bandwidth and 22% power-added efficiency (PAE) at 0.9-V supply. The in-band variation of -1-dB compressed power (P-1 dB) is only +/- 0.25 dB. This is the first reported silicon-based PA that covers both 71-76- and 81-86-GHz bands with uniform gain, output power, and PAE.

• 出版日期2015-2