Ultra-High-Density Arrays of Defect-Free AIN Nanorods: A %26quot;Space-Filling%26quot; Approach

作者：Conroy Michele; Zubialevich Vitaly Z; Li Haoning; Petkov Nikolay; O' Donoghue Sally; Holmes Justin D; Parbrook Peter J

来源：ACS Nano, 2016, 10(2): 1988-1994.

DOI：10.1021/acsnano.5b06062

• III-nitrides
• nanowires
• nanorods
• aluminum nitride
• growth mechanism

Nanostructured semiconductors have a clear potential for improved optoelectronic devices, such as high-efficiency light-emitting diodes (LEDs). However, most arrays of semiconductor nanorods suffer from having relatively low densities (or "fill factors") and a high degree of nonuniformity, especially when produced by self organized growth. Ideally an array of nanorods for an optoelectronic emitter should have a fill factor close to 100%, with uniform rod diameter and height. In this article we present a "space-filling" approach for forming defect-free arrays of AIN nanorods, whereby the separation between each rod can be controlled to 5 nm due to a self-limiting process. These arrays of pyramidal-topped AlN nanorods formed over wafer scale areas by metal organic chemical vapor deposition provide a defect-free semipolar top surface, for potential optoelectronic device applications with the highest reported fill factor at 98%.

• 出版日期2016-2