摘要

The perturbation method has been used to linearize the rate equations applicable to two-contact absorption bistable diode lasers. After adopting some approximations, explicit analytical expressions of the time evolutions for the carrier densities in the gain and absorption regions and the photon-flux density inside the cavity when the bistable laser is at the switch-on or switch-off state have been given. With these expressions, quantitative descriptions of the transient processes can be realized.