An improved small-signal equivalent circuit model for 4H-SIC power mesfets

作者：Xu, Yuehang^*; Guo, Yunchuan; Xu, Ruimin; Yan, Bo; Wu, Yunqiu

来源：Microwave and Optical Technology Letters, 2008, 50(6): 1455-1458.

DOI：10.1002/mop.23397

• parameter extraction
• SiC MESFET
• small-signal equivalent circuit

The frequency-dependence of parasitic resistances (R-s and R,1) for 4H-SiC power MESFETs is empirical modeled by adding two disperse parameters based on conventional small-signal equivalent circuit (CSEC). And a new extraction procedure for the modified SEC parameters is also proposed. The calculated S-parameters using the modified SEC model (MSEC) fit the measured ones very well up to 20 GHz.

• 出版日期2008-6
• 单位电子科技大学