Detection of lead ions with AlGaAs/InGaAs pseudomorphic high electron mobility transistor

作者:Niu Jiqiang; Zhang Yang; Guan Min; Wang Chengyan; Cui Lijie; Yang Qiumin; Li Yiyang; Zeng Yiping
来源:Chinese Journal of Semiconductors, 2016, 37(11): 114003.
DOI:10.1088/1674-4926/37/11/114003

摘要

Lead poisoning is a serious environmental concern,which is a health threat.Existing technologies always have some drawbacks,which restrict their application ranges,such as real time monitoring.To solve this problem,glutathione was functionalized on the Au-coated gate area of the pseudomorphic high electron mobility transistor(pHEMT) to detect trace amounts of Pb2+.The positive charge of lead ions will cause a positive potential on the Au gate of the pHEMT sensor,which will increase the current between the source and the drain.The response range for Pb2+ detection has been determined in the concentrations from 0.1 pmol/L to 10 pmol/L.To our knowledge,this is currently the best result for detecting lead ions.

  • 出版日期2016-11