科研之友
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摘要
Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (beta-Ga2O3) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline beta-Ga2O3 films of different thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these beta-Ga2O3 films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the beta-Ga2O3 grown via this technique (8.8 +/- 3.4W m(-1) K-1) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the beta-Ga2O3 film resulting from phonon scattering at the beta-Ga2O3/GaN interface and thermal transport across the beta-Ga2O3/GaN interface. The measured thermal properties of open atmosphere-grown beta-Ga2O3 and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices.
- 出版日期2015-2-28
