A novel SLS ELA crystallization process and its effects on polysilicon film defectivity and TFT performance

作者：Moschou Despina C^*; Exarchos M A; Kouvatsos D N; Papaioannou G J; Voutsas A T

来源：Microelectronic Engineering, 2008, 85(5-6): 1447-1452.

DOI：10.1016/j.mee.2008.01.083

• polysilicon TFTs
• SLS ELA crystallization
• DLTS analysis
• TFT reliability

Polysilicon TFTs fabricated in films crystallized with a novel SLS ELA technique were investigated. The TFT channels were oriented along the preferential direction and vertical to it, probing both directions' grain quality. DLTS assessment was conducted on unstressed TFTs in order to probe the film's defect nature. DC hot-carrier stress was applied for both channel orientations, in order to elucidate the effect of the crystallization procedure on TFT reliability. A dimensional optimization of the TFTs was found.

• 出版日期2008-6