Atomic Layer Deposition of TiO2 and ZrO2 Thin Films Using Heteroleptic Guanidinate Precursors

作者：Kaipio Mikko^*; Blanquart Timothee; Banerjee Manish; Xu Ke; Niinisto Jaakko; Longo Valentino; Mizohata Kenichiro; Devi Anjana; Ritala Mikko; Leskela Markku

来源：Chemical Vapor Deposition, 2014, 20(7-9): 209-216.

DOI：10.1002/cvde.201407115

• ALD
• Guanidinate
• Heteroleptic
• Titanium dioxide (TiO2)
• Zirconium dioxide (ZrO2)

In this study the atomic layer deposition (ALD) of TiO2 and ZrO2 using two heteroleptic amido-guanidinate precursors, [Ti(NEtMe)(3)(guan-NEtMe)] and [Zr(NEtMe)(3)(guan-NEtMe)], together with water or ozone as oxygen sources, are investigated. All processes exhibit self-limiting growth at a deposition temperature of 275 degrees C. The zirconium precursor especially gives high growth rates (0.8/1.0 angstrom per cycle with H2O/O-3). The films are also relatively smooth, as determined by atomic force microscopy (AFM). The composition of the films is examined using X-ray photoelectron spectroscopy (XPS) and time of flight elastic recoil detection analysis (TOF-ERDA). When using ozone as the oxygen source the films present very high purity. The results are compared and discussed with respect to earlier studies on guanidinate, as well as homoleptic amido precursors. %26lt;br%26gt;Full Paper: Atomic layer deposition of TiO2 and ZrO2 is performed using heteroleptic amido/guanidinate metal precursors, and ozone and water as oxygen sources. The results are compared to previous studies and the effect of the ligands on the precursor properties are discussed.

• 出版日期2014-9