Nickel oxide-induced crystallization of silicon for use in thin film transistors with a SiN(x) diffusion filter

作者：Kim Jong Yeon; Han Jin Woo; Han Jeong Min; Kim Young Hwan; Oh Byeong Yun; Kim Byoung Yong; Lee Sang Keuk; Seo Dae Shik^*

来源：Applied Physics Letters, 2008, 92(14): 143501.

DOI：10.1063/1.2908036

We investigated the use of nickel oxide (NiO) as a catalyst for the metal-induced crystallization. SiN(x) serves as a diffusion filter that forms an effective barrier to Ni and also acts as a passivation layer for metal contaminants. The NiO has a constant area density of 8.22x10(6) Ni atoms cm(-2). This allows enough depletion regions for the growth of disklike grains. The thin film transistor exhibited a field-effective mobility of 15.9 cm(2) V(-1) s(-1), a threshold voltage of -5.2 V, an I(on)/I(off) ratio of 1.6x10(7), and a gate voltage swing of 0.8 V/decade.

• 出版日期2008-4-7