Memory effects and carrier transport mechanisms of write-once-read-many-times memory devices fabricated using poly(3-hexylthiophene) molecules embedded in a polymethylmethacrylate layer on a flexible substrate

作者：Park Keun Kab; Jung Jae Hun; Kim Tae Whan^*

来源：Applied Physics Letters, 2011, 98(19): 193301.

DOI：10.1063/1.3588231

The memory effects and the carrier transport mechanisms of write-once-read-many-times (WORM) memory devices fabricated using poly(3-hexylthiophene) (P3HT) molecules embedded in a polymethylmethacrylate (PMMA) polymer layer on a flexible substrate were investigated. Current-voltage (I-V) curves at 300 K for Al/P3HT:PMMA/indium-tin-oxide WORM device showed a permanent memory behavior with an ON/OFF ratio of 10(4). The estimated retention time of the ON state of the WORM device was more than 10 years. The carrier transport mechanisms of the WORM memory devices are described using several models to fit the experimental I-V data.

• 出版日期2011-5-9