Direct current magnetron sputtering deposition of InN thin films

作者：Cai, Xing Min^*; Hao, Yan Qing; Zhang, Dong Ping; Fan, Ping

来源：Applied Surface Science, 2009, 256(1): 43-45.

DOI：10.1016/j.apsusc.2009.07.067

• InN
• Film deposition
• Semiconductors
• Sputtering

In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N(2) (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

• 出版日期2009-10-15
• 单位深圳大学