Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

作者：Loeber Thomas H^*; Hoffmann Dirk; Fouckhardt Henning

来源：Beilstein Journal of Nanotechnology, 2011, 2: 333-338.

DOI：10.3762/bjnano.2.39

• V/III flux ratio
• GaSb quantum dots
• growth temperature
• semiconductor laser
• Stranski-Krastanov growth

GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski-Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 degrees C, not commonly used by other research groups. These parameters enabled the growth of dense lying dots with a density at least up to 6.5 x 10(10) cm(-2) and a diameter and height of 20 and 4 nm, respectively. The photoluminescence (PL) spectra revealed a QD peak at an emission wavelength between lambda = 0.876 and 1.035 mu m, depending on the exact conditions. Using a stack of such QD layers, an electrically pumped efficient QD laser was realized with an emission wavelength of lambda approximate to 0.900 mu m at a temperature of 84 K.

• 出版日期2011-6-30