科研之友
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摘要
A monolithic dual emission layer based white LED has been presented in this paper. Recent achievements of 40% Indium concentrations in processing of InGaN layers made it possible for researchers to design and develop superior semiconductor devices. Current white light LED technologies suffer from complex device structures, costly and shorter lifetimes. The proposed monolithic solid-state white LED structure is based on dual active regions which produces yellow and blue emissions simultaneously. It is a very cost effective, reliable and longer lifetime LED structure. Under biasing, the active regions radiate at a set level of emission intensities which mix and emit white light out of the device. The device structure has been designed, optimized and characterized with the use of an industrial standard process and device simulator, Silvaco TCAD. The simulated I-V characteristics, total luminous power, series resistance, blue-shift due to increasing currents and indium contents, full-width at half-maximum (FWHM), spectral power distribution (SPD), power conversion efficiency, CIE (International commission on illumination) coordinates and correlated color temperature (CCT) of the proposed structure are presented in this work.
- 出版日期2014-6
