Optical and electrical properties of indium tin oxide thin films sputter-deposited in working gas containing hydrogen without heat treatments

作者：Luo Suning; Okada Koichi; Kohiki Shigemi^*; Tsutsui Film; Shimooka Hirokazu; Shoji Fumiya

来源：Materials Letters, 2009, 63(6-7): 641-643.

DOI：10.1016/j.matlet.2008.12.008

• Hydrogen
• Indium tin oxide
• Optical transmittance
• Carrier transport

Polycrystalline thin films of indium tin oxide sputter-deposited in the working gas containing hydrogen of 0.3-1.5% exhibited transmittance of >= 80% for visible lights and blue-shift of >= 0.1 eV in the optical absorption energy. The film deposited in the gas containing hydrogen of 1% demonstrated almost flat temperature-dependent resistivity and the lowest resistivity of = 1.5 x 10(-4) Omega cm at room temperature. The carrier density showed an inverse V-shaped behavior with the maximum at the hydrogen concentration of 1%. The mobility stayed at almost constant below the hydrogen concentration of 1% and dropped rather rapidly above 1%.

• 出版日期2009-3-15
• 单位辽宁工业大学