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摘要
In order to analyze an impact of threshold voltage (Vth) fluctuation induced by random telegraph noise (RTN) on LSI circuit design, we measured a 40-nm 6-Tr-SRAM TEG which enables to evaluate individual bit-line current. RTN phenomenon was successfully measured and we also identified that the transfer MOSFET in an SRAM bit-cell was the most sensitive MOSFET. The proposed word line boosting technique, which applies slightly extra stress to the transfer MOSFET, improves about 30% of detecting probability of fail-bit cells caused by RTN.
- 出版日期2014-3
