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摘要
A novel "W"-shape-buffer lateral insulator gate bipolar transistor (WB-LIGBT) is proposed. In this LIGBT, the buffer layer is changed from the typical "U" shape to a novel "W" shape, so as to provide a large current capability and high reliability to protect the device from electrostatic discharge (ESD) damage. The proposed WB-LIGBT has been implemented with a 0.5 mu m CMOS technology by using silicon on insulator material. The experiment results show an improvement of 13% in current capability and 27% in ESD robustness comparing with the conventional LIGBT. The suggested WB-LIGBT has been applied for the output device of plasma display panel scan driver IC.
- 出版日期2014-9
- 单位东南大学
