Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide nanoparticles

作者：Sun, Yanmei^*; Wen, Dianzhong; Bai, Xuduo

来源：Physical Chemistry Chemical Physics, 2018, 20(8): 5771-5779.

DOI：10.1039/c7cp07887k

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Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles. When applying a negative bias on the top electrode, the fabricated devices with a simple sandwich structure of indium tin oxide (ITO)/composite polymer/aluminum (Al) exhibited three distinct resistance states, which could be labeled as "OFF'', "ON1'' and "ON2'' for ternary data storage application. The ITO/polystyrene (PS) + ZnO/Al devices can endure 3 x 10(4) read-cycles and exhibit a retention time of 10(4) s. The resistance-temperature dependence at different resistance states was investigated to confirm the temperature-dependent properties. The resistance of the "OFF'' and "ON1'' state reveals negative temperature dependence, manifesting a typical semiconductor characteristic. The resistance of the "ON2'' state exhibits positive temperature dependence, showing metallic properties.

• 出版日期2018-2-28
• 单位黑龙江大学