Multiferroic properties of sputtered BiFeO(3) thin films

作者：Li Yibin^*; Sritharan Thirumany; Zhang Sam; He Xiaodong; Liu Yang; Chen Tupei

来源：Applied Physics Letters, 2008, 92(13): 132908.

DOI：10.1063/1.2901871

A cosputtering method was used to deposit BiFeO(3) thin films on Pt/Ti/SiO(2)/Si substrates. It was confirmed as a polycrystalline film with a tetragonal crystal structure in the annealed state. Both Fe(2+) and Fe(3+) ions were found to coexist in the film. The leakage current density is as low as 10(-3) A/cm(2) at 120 kV/cm. This sputtered film shows multiferroic properties exhibiting a saturated ferroelectric loop with a large remnant polarization of 37 mu C/cm(2) and a saturated ferromagnetic loop with saturation magnetization of 21 emu/cm(3) at room temperature.

• 出版日期2008-3-31
• 单位哈尔滨工业大学; 南阳理工学院