Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs

作者：Praveen K C; Pushpa N; Naik P S; Cressler John D; Tripathi Ambuj; Prakash A P Gnana^*

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2012, 273: 43-46.

DOI：10.1016/j.nimb.2011.07.034

• SiGe HBT
• Ion irradiation
• Proton and gamma irradiation
• EB spacer oxide
• STI oxide

We have investigated the effects of 50 MeV lithium ion irradiation on the DC electrical characteristics of first-generation silicon-germanium heterojunction bipolar transistors (50 GHz SiGe HBTs) in the dose range of 600 krad to 100 Mrad. The results of 50 MeV Li3+ ion irradiation on the SiGe HBTs are compared with 63 MeV proton and Co-60 gamma irradiation results in the same dose range in order to understand the damage induced by different LET species. The radiation response of emitter-base (EB) spacer oxide and shallow trench isolation (STI) oxide to different irradiation types are discussed in this paper. We have also focused on the efficacy in the application of a Pelletron accelerator to study total dose irradiation studies in SiGe HBTs.

• 出版日期2012-2-15