A 0.26-mu m(2) U-Shaped nitride-based programming cell on pure 90-nm CMOS technology

作者：Lai Han Chao^*; Cheng Kai Yuan; King Ya Chin; Lin Chrong Jung

来源：IEEE Electron Device Letters, 2007, 28(9): 837-839.

DOI：10.1109/LED.2007.903953

• CMOS one time programming (OTP)
• logic nonvolatile memory (NVM)
• nitride storage node
• source-side injection (SSI)

A novel one time programming (OTP) cell with a nitride-based storage has been developed for advanced programmable logic applications. This cell that is processed by pure logic process and decoupled with transistor gate oxide has a highly stable and extremely wide ON/OFF It exhibits a superior disturb immunity in program and read operations. In addition, a very small cell size (0.263 mu m(2)) has been achieved using 90-mn pure CMOS logic process and is scalable in more advanced CMOS logic technologies by eliminating the constraint of transistor gate-oxide thickness. The all new OTP cell has a wide ON/OFF window and a superior writing efficiency by source-side injection programming mechanism. This novel OTP cell is a very promising programmable logic solution, with a fully CMOS-logic-compatible process below the 90-mn node.

• 出版日期2007-9
• 单位清华大学