Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

作者：Wu Y Q; Xu M; Ye P D^*; Cheng Z; Li J; Park J S; Hydrick J; Bai J; Carroll M; Fiorenza J G; Lochtefeld A

来源：Applied Physics Letters, 2008, 93(24): 242106.

DOI：10.1063/1.3050466

• alumina
• atomic layer deposition
• dislocations
• gallium arsenide
• III-V semiconductors
• MOCVD coatings
• MOSFET
• semiconductor epitaxial layers
• semiconductor-insulator boundaries
• surface conductivity

High quality GaAs epilayers grown by metal-organic chemical vapor deposition are demonstrated on a SiO2-patterned silicon substrate using aspect ratio trapping technique, whereby threading dislocations from lattice mismatch are largely reduced via trapping in SiO2 trenches during growth. A depletion-mode metal-oxide-semiconductor field-effect transistor (MOSFET) is demonstrated on a n-doped GaAs channel with atomic-layer deposited Al2O3 as the gate oxide. The 10 mu m gate length transistor has a maximum drain current of 88 mA/mm and a transconductance of 19 mS/mm. The surface mobility estimated from the accumulation drain current has a peak value of similar to 500 cm(2)/Vs, which is comparable with those from previously reported depletion-mode GaAs MOSFETs epitaxially grown on semi-insulating GaAs substrates.

• 出版日期2008-12-15