Novel LDNMOS embedded SCR with strong ESD robustness based on 0.5 mu m 18 V CDMOS technology

作者：Wang Yang; Jin Xiang liang^*; Zhou A cheng

来源：Journal of Central South University, 2015, 22(2): 552-559.

DOI：10.1007/s11771-015-2555-1

• LDNMOS embedded SCR
• TCAD simulation
• electrostatic discharge (ESD) robustness
• transmission line pulse (TLP)

A novel LDNMOS embedded silicon controlled rectifier (SCR) was proposed to enhance ESD robustness of high-voltage (HV) LDNMOS based on a 0.5 mu m 18 V CDMOS process. A two-dimensional (2D) device simulation and a transmission line pulse (TLP) testing were used to analyze the working mechanism and ESD performance of the novel device. Compared with the traditional GG-LDNMOS, the secondary breakdown current (I (t2)) of the proposed device can successfully increase from 1.146 A to 3.169 A with a total width of 50 mu m, and ESD current discharge efficiency is improved from 0.459 mA/mu m(2) to 1.884 mA/mu m(2). Moreover, due to their different turn-on resistances (R (on)), the device with smaller channel length (L) owns a stronger ESD robustness per unit area.

• 出版日期2015-2
• 单位湘潭大学