Atomic Layer Deposition of High-k Oxides of the Group 4 Metals for Memory Applications

作者:Niinisto Jaakko*; Kukli Kaupo; Heikkila Mikko; Ritala Mikko; Leskela Markku
来源:Advanced Engineering Materials, 2009, 11(4): 223-234.
DOI:10.1002/adem.200800316

摘要

This paper reviews several high-k ALD processes potentially applicable to the production of capacitors, concentrating on very recent developments. A list of the dielectric materials under investigation consists of the oxides of several metals, including the Group 4 (Ti, Zr, Hf) elements. The binary oxides of Group 4 metals, as well as their mixtures with other oxides, doped hosts, or multi-layers in the form Of nano-laminates are of interest. Several examples of our recent results are shown, including possible ALD routes to materials not previously grown, as well as advances in process development.

  • 出版日期2009-4