Compact On-Wafer Test Structures for Device RF Characterization

作者：Esfeh Babak Kazemi^*; Ben Ali Khaled; Raskin Jean Pierre

来源：IEEE Transactions on Electron Devices, 2017, 64(8): 3101-3107.

DOI：10.1109/TED.2017.2717196

• 50-mu m-pitch RF probes
• coplanar waveguide (CPW) transmission lines
• on-wafer RF characterization
• RF MOSFET parasitic extraction
• RF pads
• RF test structures
• silicon-on-insulator (SOI) technology
• trap-rich high-resistivity SOI substrate

The main objective of this paper is to validate the radio frequency (RF) characterization procedure based on compact test structures compatible with 50-mu m-pitch RF probes. It is shown that by using these new test structures, the layoutgeometry and hence the on-chip space consumption for complete sets of passive and active devices, e.g., coplanar waveguide transmission lines and RF MOSFETs, is divided by a factor of two. The validity domain of these new compact test structures is demonstrated by comparing their measurement results with classical test structures compatible with 100-150 mu m-pitch RF probes. 50-mu m-pitch de-embedding structures have been implemented on 0.18-mu m RF silicon-on-insulator (SOI) technology. Cutoff frequencies and parasitic elements of the RF SOI transistors are extracted and the RF performance of traprich SOI substrates is analyzed under small-and largesignal conditions.

• 出版日期2017-8