Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors

作者：Park Jong Tae^*; Kim Jin Young; Colinge Jean Pierre

来源：Applied Physics Letters, 2012, 100(8): 083504.

DOI：10.1063/1.3688245

Negative-bias-temperature-instability (NBTI) and hot-carrier induced device degradation have been experimentally compared between accumulation mode (AM) p-channel multigate transistors (pMuGFETs) and junctionless (JL) pMuGFET. NBTI degradation is less significant in junctionless pMuGFETs than AM pMuGFETs. The threshold voltage shift is less significant in junctionless transistors than AM transistors. The device simulation shows that the peak of lateral electric field and the impact ionization rate of AM device are larger than those of junctionless devices.

• 出版日期2012-2-20