Analysis of the device characteristics of AlGaN/GaN HEMTs over a wide temperature range

作者：Zhao, M.^*; Liu, X. Y.; Zheng, Y. K.; Li, Yankui; Ouyang, Sihua

来源：Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2013, 178(7): 465-470.

DOI：10.1016/j.mseb.2013.01.022

• AlGaN high-electron-mobility transistor
• Temperature dependence
• Reliability
• Current-voltage (I-V) characteristics

In this study, we investigate the behavior of the current-voltage (I-V) characteristics of AlGaN/GaN HEMT in the temperature range of 223-398 K. Temperature dependent device characteristics and the current transport mechanism are reported. It is observed that the Schottky barrier height Phi increases and the ideality factor n decreases with temperature. There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height inhomogeneities of AlGaN/GaN HEMT. The estimated values of the series resistances (R-s) are in the range of 144.2 Omega at 223 K to 74.3 Omega at 398 K. The Phi, n, R-s, G(m) and Schottky leakage current values are seen to be strongly temperature dependent.

• 出版日期2013-4-20
• 单位中国科学院