The ALU(+) Concept: N-Type Silicon Solar Cells With Surface-Passivated Screen-Printed Aluminum-Alloyed Rear Emitter

作者：Bock Robert^*; Schmidt Jan; Mau Susanne; Hoex Bram; Brendel Rolf

来源：IEEE Transactions on Electron Devices, 2010, 57(8): 1966-1971.

DOI：10.1109/TED.2010.2050953

• Aluminium oxide
• amorphus silicon
• atomic layer deposition
• emitter passivation
• n-type silicon
• passivation
• photovoltaic cells
• screen-printed emitter

Aluminum-doped p-type (Al-p(+)) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemical-vapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p(+) emitter results in an emitter saturation current density J(0e) of 246 fA/cm(2), the Al2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm(2), which is the lowest J(0e) reported so far for screen-printed Al-doped p(+) emitters. Moreover, the Al2O3 as well as the Al2O3/SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900 degrees C. We implement our newly developed passivated Al-p(+) emitter into an n(+) np(+) solar cell structure, the so-called ALU(+) cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm(2), clearly demonstrating the high-efficiency potential of our ALU(+) cell concept.

• 出版日期2010-8