Dependence of Light-Accelerated Instability on Bias and Environment in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

作者：Chen, Yu Chun; Chang, Ting Chang; Li, Hung Wei; Chung, Wan Fang; Hsieh, Tien Yu; Chen, Yi Hsien; Tsai, Wu Wei; Chiang, Wen Jen; Yan, Jing Yi

来源：ECS Journal of Solid State Science and Technology, 2013, 2(4): Q74-Q76.

DOI：10.1149/2.028304jss

This study examines the dependence of light-accelerated instability on bias and environment in amorphous indium-gallium-zinc-oxide thin film transistors. When device is in vacuum ambient, the threshold voltage of device after negative gate bias illumination stress (NBIS) showed bias-dependent electrical degradation behavior. However, experimental results show the degradation of electrical characteristic in a-IGZO devices does not only rely on the charge trapping mechanism for NBIS. During NBIS in oxygen, moisture-simulated and atmosphere ambient, the negative shift in electrical characteristic is suppressed when compared to that in vacuum. This implies that the adsorbent gas species in the surrounding environment dominates the electrical characteristic degradation of devices during NBIS, which leading the change of dominant mechanism from photon-created carrier trapping to adsorbed/desorbed gas phenomenon.

• 出版日期2013
• 单位中山大学