Black Silicon nanostructures on silicon thin films prepared by reactive ion etching

作者：Steglich Martin^*; Kaesebier Thomas; Hoeger Ingmar; Fuechsel Kevin; Tuennermann Andreas; Kley Ernst Bernhard

来源：Chinese Optics Letters, 2013, 11(S1): S10502.

DOI：10.3788/COL201311.S10502

In this letter, the application of dry etching to prepare Black Silicon nanostructures on crystalline silicon thin films on glass is described. The utilized reactive ion etching with an inductively coupled plasma (ICP-RIE) of SF6 and O-2 is discussed and a remarkable increase in light absorption of about 70% is demonstrated.

• 出版日期2013-6-30