Facile synthesis and photoluminescence spectroscopy of 3D-triangular GaN nano prism islands

作者：Kumar Mukesh; Pasha S K; Krishna T C Shibin; Singh Avanish Pratap; Kumar Pawan; Gupta Bipin Kumar^*; Gupta Govind

来源：Dalton Transactions, 2014, 43(31): 11855-11861.

DOI：10.1039/c4dt01191k

We report a strategy for fabrication of 3D triangular GaN nano prism islands (TGNPI) grown on Ga/Si(553) substrate at tow temperature by N-2(+) ions implantation using a sputtering gun technique. The annealing of Ga/Si(553) (600 degrees C) followed by nitridation (2 key) shows the formation of high quality GaN TGNPI cross-section. TGNPI morphology has been confirmed by atomic force microscopy. Furthermore, these nano prism islands exhibit prominent ultra-violet luminescence peaking at 366 nm upon 325 nm excitation wavelength along with a low intensity yellow luminescence broad peak at 545 nm which characterizes low defects density TGNPI. Furthermore, the time-resolved spectroscopy of luminescent TGNPI in nanoseconds holds promise for its futuristic application in next generation UV-based sensors as well as many portable optoelectronic devices.

• 出版日期2014-8-21