Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

作者：de Coux P; Bachelet R; Warot Fonrose B; Skumryev V; Lupina L; Niu G; Schroeder T; Fontcuberta J; Sanchez F^*

来源：Applied Physics Letters, 2014, 105(1): 012401.

DOI：10.1063/1.4887349

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization.

• 出版日期2014-7-7