Hydrophilic low-temperature direct wafer bonding

作者：Ventosa C^*; Rieutord F; Libralesso L; Morales C; Fournel F; Moriceau H

来源：Journal of Applied Physics, 2008, 104(12): 123524.

DOI：10.1063/1.3040701

• annealing
• bonding processes
• condensation
• elemental semiconductors
• infrared spectra
• interface structure
• semiconductor-insulator boundaries
• silicon
• silicon compounds
• X-ray reflection

The sealing mechanism of silicon bonding interfaces is reported as a function of annealing temperature. Details of the structural and chemical interface evolution are obtained for hydrophilic silicon/silicon and silicon/silicon dioxide wafer bonding, using x-ray reflectivity and infrared spectroscopy. A two-step mechanism is demonstrated: first a partial sealing of the interface driven by cross-wafer silanol bond condensation and second a water evacuation via oxide formation at the silicon oxide interface.

• 出版日期2008-12-15
• 单位中国地震局