摘要

Time- and spatially resolved optical emission spectroscopy (OES) was performed to characterize the plasma produced in a pulsed laser deposition (PLD) and a hybrid magnetron sputtering-pulsed laser deposition (MS-PLD) systems suitable for SiC thin films preparation. In the PLD system, a SiC target was ablated by a KrF laser in vacuum or argon ambient. In the MS-PLD system, a graphite target was ablated by the laser and Si target was sputtered by DC magnetron in argon ambient. The evolution of the spectra in PLD system with argon pressures 1-10 Pa and the distance from the laser target was studied. Spectra of the plasma in the PLD system revealed presence of highly excited and energetic atomic/ionic species (Ar, C, C+, Si and Si+). The shape of Si emission temporal profiles taken at the target markedly differs from those observed at further distances. In the spectra taken in the MS-PLD system, presence of excited Si atoms in the vicinity of the substrate was found and emission of C-2 molecule appeared.

  • 出版日期2007-4