A novel low-voltage high precision current reference based on subthreshold MOSFETs

作者：Yu Guo yi^*; Zou Xue cheng

来源：Journal of Zhejiang University-Science A(Applied Physics & Engineering), 2007, 8(1): 50-55.

DOI：10.1631/jzus.2007.A0050

• current reference
• curvature-compensation
• low voltage
• subthreshold
• CMOS integrated circuit

A novel topology low-voltage high precision current reference based on subthreshold Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) is presented. The circuit achieves a temperature-independent reference current by a proper combination current of two first-order temperature-compensation current references, which exploit the temperature characteristics of integrated poly2 resistors and the I-V transconductance characteristics of MOSFET operating in the subthreshold region. The circuit, designed with the 1st silicon 0.35 mu m standard CMOS logic process technology, exhibits a stable current of about 2.25 mu A with much low temperature coefficient of 3 x 10(-4) mu A/C in the temperature range of -40 similar to 150 C at 1 V supply voltage, and also achieves a better power supply rejection ratio ( PSRR) over a broad frequency. The PSRR is about -78 dB at DC and remains -42 dB at the frequency higher than 10 MHz. The maximal process error is about 6.7% based on the Monte Carlo simulation. So it has good process compatibility.

• 出版日期2007-1
• 单位华中科技大学