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摘要
An accurate compact model for stacked transformers is proposed. The parasitics between the primary metal coils and the substrate are taken into consideration. The model parameters can be analytically extracted from open-loaded S-parameters measured from two-port test structures. The modeling methodology renders excellent agreement with the data from both simulation and measurement over the frequency range of 0.1-20GHz for a monolithic stacked transformer manufactured in 0.18-mu m Radio frequency Complementary Metal Oxide Semiconductor (RF CMOS) technology.
- 出版日期2016-4
- 单位杭州电子科技大学
