Accurate strain measurements in highly strained Ge microbridges

作者：Gassenq A^*; Tardif S; Guilloy K; Dias G Osvaldo; Pauc N; Duchemin I; Rouchon D; Hartmann J M; Widiez J; Escalante J; Niquet Y M; Geiger R; Zabel T; Sigg H; Faist J; Chelnokov A; Rieutord F; Reboud V; Calvo V

来源：Applied Physics Letters, 2016, 108(24): 241902.

DOI：10.1063/1.4953788

Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to epsilon(100) = 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9% corresponding to an unexpected Delta omega = 9.9 cm(-1) Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression. Published by AIP Publishing.

• 出版日期2016-6-13
• 单位中国地震局