Nonvolatile memory devices based on poly(vinyl alcohol) plus graphene oxide hybrid composites

作者：Sun, Yanmei^*; Lu, Junguo; Ai, Chunpeng; Wen, Dianzhong^*

来源：Physical Chemistry Chemical Physics, 2016, 18(16): 11341-11347.

DOI：10.1039/c6cp00007j

• RESISTIVE SWITCHING BEHAVIOR
• RESET STATISTICS
• OPERATION
• CONDUCTANCE
• MECHANISM
• VOLTAGE
• FILMS

Nonvolatile memory devices based on active layers of poly(vinyl alcohol) (PVA) + graphene oxide (GO) hybrid composites have been fabricated. The performance of the ITO/PVA + GO/Al device was compared with that of the ITO/PVA/Al device. The ITO/PVA + GO/Al device showed excellent performance compared to the ITO/PVA/Al device (an ON/OFF resistance ratio of 1.2 x 10(2) at 1 V, V-SET similar to -1.45 V and V-RESET similar to 3.6 V), with a higher ON/OFF resistance ratio of 3 x 10(4) at 1 V and lower operating voltages of V-SET similar to -0.75 V and V-RESET similar to 3.0 V. Furthermore, endurance performance and write-read-erase-reread (WRER) cycle tests manifest that the presence of GO in ITO/PVA + GO/Al devices makes them have better stability and repeatability. The results show that the performance of hybrid devices can be effectively enhanced by the introduction of GO into the PVA matrix.

• 出版日期2016-4-28
• 单位齐齐哈尔大学; 黑龙江大学