A numerical study on subband structure of InxAl1-xN/GaN-based HEMT structures with low-indium (x %26lt; 0.10) barrier layer

作者：Elibol K^*; Atmaca G; Tasli P; Lisesivdin S B

来源：Solid State Communications, 2013, 162: 8-12.

DOI：10.1016/j.ssc.2013.03.005

• InAlN/AlN/GaN
• HEMT
• Subband
• 2DEG

The effects of thicknesses and alloy fraction of different layers in a pseudomorphic InAlN/AlN/GaN HEMTs on 2DEG wave functions and carrier densities of subbands were investigated with the help of one-dimensional self-consistent solutions of nonlinear Schrodinger-Poisson equations. Higher carrier densities are obtained at lower indium mole fractions. Also, the effect of second subband is shown within these carrier density values.

• 出版日期2013-5