Space-charge-limited magnetoresistance in organic semiconductors

作者：Zhang Tianyou; Ding Meng; Zhao Junqing^*

来源：Physics Letters A, 2011, 376(1): 56-58.

DOI：10.1016/j.physleta.2011.10.035

• Bipolaron
• Hopping transport
• Organic magnetoresistance
• Space-charge-limited current

We present a two-site model for large magnetic field effect on current of nonmagnetic organic semiconductor, based on bipolaron formation in the presence of both hyperfine field and an applied magnetic field. Under the framework of space-charge-limited current, we derived our current density and magnetoresistance expression. The magnetoresistance fit well with the Lorentzian empirical law. We discuss all parameters involved in, and elucidate the origin of positive and negative magnetoresistance under our model.

• 出版日期2011-11-28
• 单位山东建筑大学