Comparison and statistical analysis of four write stability metrics in bulk CMOS static random access memory cells

作者：Qiu Hao^*; Mizutani Tomoko; Saraya Takuya; Hiramoto Toshiro

来源：Japanese Journal of Applied Physics, 2015, 54(4): 04DC09.

DOI：10.7567/JJAP.54.04DC09

The commonly used four metrics for write stability were measured and compared based on the same set of 2048 (2k) six-transistor (6T) static random access memory (SRAM) cells by the 65nm bulk technology. The preferred one should be effective for yield estimation and help predict edge of stability. Results have demonstrated that all metrics share the same worst SRAM cell. On the other hand, compared to butterfly curve with non-normality and write N-curve where no cell state flip happens, bit-line and word-line margins have good normality as well as almost perfect correlation. As a result, both bit line method and word line method prove themselves preferred write stability metrics.

• 出版日期2015-4