A 1.9-kV/2.6 m Omega.cm(2) Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V

作者：Zhang, Tao; Zhang, Jincheng^*; Zhou, Hong^*; Chen, Tangsheng; Zhang, Kai; Hu, Zhuangzhuang; Bian, Zhaoke; Dang, Kui; Wang, Yi; Zhang, Li; Ning, Jing; Ma, Peijun; Hao, Yue

来源：IEEE Electron Device Letters, 2018, 39(10): 1548-1551.

DOI：10.1109/LED.2018.2864874

• Lateral GaN Schottky barrier diode
• tungsten anode
• breakdown
• power figure-of-merit

In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on a silicon substrate with a low turn-ON voltage (V-ON) of 0.35 V and tungsten (W) as the anode. Non-field-plated lateral GaN SBDs with the anode-cathode distances (L-AC) of 6, 10, 15, 20, and 25 mu m demonstrate the reverse breakdown voltages of 0.6, 1.1, 1.25, 1.5, and 1.9 kV with the differential specific ON-resistances (R-ON,R-sp) of 0.38, 0.72, 1.23, 1.87, and 2.61 m Omega.cm(2), respectively. The power figure-of-merit (FOM) is calculated to be 1 x 10(3), 1.7 x 10(3), 1.3 x 10(3), 1.2 x 10(3), and 1.4 x 10(3) MW/cm(2). To the best of our knowledge, this FOM of 1.7 x 10 3 MW/cm(2) is the highest among all the lateral GaN SBDs on a Si substrate. Combined with the similar to 10(8) current ON/OFF ratio at room temperature, the GaN SBD with the W anode shows a great promise for next-generation power electronics.

• 出版日期2018-10
• 单位西安电子科技大学