科研之友
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摘要
A bottom-imprint method to fabricate high-quality Si [100] nanowire arrays is described (see figure). This new approach combines the functions of a highly ordered anodic aluminum oxide (AAO) template that acts as both a stamp and a template. Vertically aligned, Al-catalyzed Si nanowire (NW) arrays are grown epitaxially on the Si substrate with a narrow size distribution.
- 出版日期2009-12-11
