Analysis and Modeling of Cross-Coupling and Substrate Capacitances in GaN HEMTs for Power-Electronic Applications

作者：Ahsan Sheikh Aamir^*; Ghosh Sudip; Khandelwal Sourabh; Chauhan Yogesh Singh

来源：IEEE Transactions on Electron Devices, 2017, 64(3): 816-823.

DOI：10.1109/TED.2017.2654264

• Capacitance
• cross-coupling
• GaN HEMTs
• mixed-mode
• substrate
• switching

In this paper, we present a capacitance model for field-plate AlGaN/GaN High Electron Mobility Transistor (HEMTs) accounting for the contribution of substrate capacitances and cross-coupling between field plates. TCAD simulations are performed to analyze both these contributions and analytical expressions for charges corresponding to the cross-coupling and substrate capacitances are presented in terms of our existing surface-potential-based model. The modeled results are validated by comparing the time domain waveforms of a test circuit using a mixed-mode simulation setup in which the impact of cross-coupling and substrate capacitances on accuracy of switching transients predicted by the model is discussed.

• 出版日期2017-3