摘要

This letter reports the negative differential resistance (NDR) behavior of perylene-3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride films induced by aggregate formation in the film. It is observed that aggregate-states in the energy gap can by-pass the common charge conduction mode, and electron injection, trapping, and conduction through these states lead to the NDR characteristic. The rate-dependence of NDR is discussed in terms of the transit time and lifetime of the aggregates-states electrons. The quenching of NDR by photoillumination is also observed, and is attributed to the saturation of aggregates-states by photoelectrons.

  • 出版日期2009-11-16