Application of Exponential Tail-State Distribution Model to the Above-Threshold Characteristics of Zn-Based Oxide Thin-Film Transistors

作者：Takechi Kazushige^*; Nakata Mitsuru; Eguchi Toshimasa; Yamaguchi Hirotaka; Kaneko Setsuo

来源：IEEE Transactions on Electron Devices, 2009, 56(9): 2165-2168.

DOI：10.1109/TED.2009.2026392

• Amorphous silicon
• oxide semiconductor
• polycrystalline silicon (pc-Si)
• structural disorder
• tail-state distribution
• thin-film transistor (TFT)

Our experimental results for amorphous InGaZnO4 and polycrystalline ZnO TFTs show a gate-voltage-dependent transconductance that is somewhat different from that for crystalline MOSFETs. We show that a model of the exponential distribution of band tail states can be used to describe the above-threshold behavior of Zn-based oxide TFTs.

• 出版日期2009-9