Analysis of the Voltage-Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching

作者：Huang Peng^*; Wang Yijiao; Li Haitong; Gao Bin; Chen Bing; Zhang Feifei; Zeng Lang; Du Gang; Kang Jinfeng; Liu Xiaoyan

来源：IEEE Transactions on Nanotechnology, 2014, 13(6): 1127-1132.

DOI：10.1109/TNANO.2014.2340571

• AC switching
• compact model
• high speed
• low voltage
• resistive random access memory (RRAM)
• voltage-time dilemma

In this paper, the ac electrical characteristics of metal oxide-based resistive random access memory are investigated based on a developed compact model and the experiment. The voltage-time dilemma phenomenon and the impacts of critical factors on resistive switching speed are addressed. Based on predictions of the model, the small parasitic capacitance, low target high resistance, and large thermal resistance are beneficial to accelerate the resistive switching speed both in SET and RESET processes. The high SET speed and low SET voltage can be achieved by tuning the activation energy of oxygen vacancies. While for the RESET process, the barriers of the release of oxygen ions from electrode and the hopping in resistive switching layer should be turned down simultaneously for high switching speed and low operation voltage.

• 出版日期2014-11
• 单位北京大学