摘要
We consider a near-field enhanced negative luminescent refrigeration system made of a polar material supporting surface-phonon polariton resonances and a narrow-band-gap semiconductor under a reverse bias. We show that in the near-field regime, such a device yields significant cooling power density and a high efficiency close to the Carnot limit. In addition, the performance of our system still persists even in the presence of strong nonidealities such as Auger recombination and sub-band-gap thermal radiation from free carriers.
- 出版日期2016-8-18