A BIST Scheme With the Ability of Diagnostic Data Compression for RAMs

作者:Hou Chih Sheng*; Li Jin Fu; Fu Ting Jun
来源:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2014, 33(12): 2020-2024.
DOI:10.1109/TCAD.2014.2363393

摘要

This paper proposes a built-in self-test (BIST) scheme with syndrome-compression ability for random access memories (RAMs) with static (SF) and dynamic faults (DFs). A March-element-based (MEB) compression scheme is proposed to reduce the volume of diagnostic data. The MEB compression scheme can efficiently compress the diagnostic data of a RAM tested by a March test for detecting SFs and DFs. Simulation results show that the compression ratio (the ratio of the number bits of the compressed diagnostic data to that of the original diagnostic data) is about 50.79% for an 8Kx16-bit memory. The area overhead of the BIST with the MEB compressor is about 2.73% for an 8Kx16-bit RAM using TSMC 0.18 um cell library.