摘要

Graphene oxide (GO) nanostructures have been aligned between conducting electrodes via dielectrophoresis (DEP) with different electrical configurations. The arrangement of ground with respect to peak-to-peak voltage (V-pp) plays a crucial role in manipulating the GO nanostructures. Grounds on both sides of the V-pp electrode give an excellent linking of GO nanostructures which is explained by scanning electron microscopy and current-voltage characteristics. A finite element method simulation explains the electric field and voltage variation profile during DEP process. The optimized aligned GO nanostructures are used as hydrogen gas sensor with a sensitivity of 6.0% for 800 ppm hydrogen gas.

  • 出版日期2015-5-18